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IXFC14N60P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS220 TM (IXFC) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 20V, I D = 7A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 7A
R G = 10 Ω (External)
7
13
2500
215
13
23
27
70
26
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 7A
36
16
12
nC
nC
nC
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
R thJC
1.00 ° C/W
R thCS
Source-Drain Diode
0.21
° C/W
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
14
42
A
A
V SD
I F = I S , V GS = 0V, Note 1
1.5
V
Ref: IXYS CO 0177 R0
t rr
Q RM
I RM
I F = 14A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
6.0
0.6
200 ns
nC
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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